Silicon-based dielectric tunneling emitter
US6902458B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 12, 2004 |
| Grant date | Jun 7, 2005 |
| Priority date | — |
| Expiry date | Jan 15, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J1/312
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
An emitter has an electron supply layer and a silicon-based dielectric layer formed on the electron supply layer. The silicon-based dielectric layer is preferably less than about 500 Angstroms. Optionally, an insulator layer is formed on the electron supply layer and has openings defined within which the silicon-based dielectric layer is formed. A cathode layer is formed on the silicon-based dielectric layer to provide a surface for energy emissions of electrons and/or photons. Preferably, the emitter is subjected to an annealing process thereby increasing the supply of electrons tunneled from the electron supply layer to the cathode layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.