Method of manufacturing a device
US6902774B2 · kind B2 · utility
10Cited by
6References
40Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Jul 25, 2002 |
| Grant date | Jun 7, 2005 |
| Priority date | — |
| Expiry date | Jun 13, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/4835
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A method of manufacturing a device includes activating a gas containing at least one of hydrogen and of nitrogen by a hollow cathode discharge and exposing a first surface of a first material to the activated gas, thereby generating at the first surface an enrichment of at least one of hydrogen and of nitrogen and applying a further treatment to the enriched surface.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.