Method of forming a CMOS thin film transistor device
US6902961B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 29, 2003 |
| Grant date | Jun 7, 2005 |
| Priority date | — |
| Expiry date | Jul 29, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D86/60
Abstract
A method of forming a CMOS thin film transistor device. A dry etching procedure is performed to remove part of a photoresist layer and part of a metal layer and thus forms a gate with a symmetrical cone shape and a remaining photoresist layer. The dielectric layer is thus exposed in the lightly doped area. Specially, the bottom width of the first gate is narrower than that of the first metal layer and the symmetrical cone shape is gradually thinner from bottom to top. Using the gate as a mask, an n−-ion implantation is performed to form a self-aligned and symmetrical LDD region in a semiconductor layer without additional photolithography steps.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.