Semiconductor device and method for manufacturing same
US6903398B2 · kind B2 · utility
26Cited by
0References
10Claims
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Key dates
| Filing date | Dec 29, 2003 |
| Grant date | Jun 7, 2005 |
| Priority date | — |
| Expiry date | Dec 29, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/0228
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device is provided which has a capacitor insulating film made up of zirconium aliminate being an amorphous film obtained by having crystalline dielectric contain amorphous aluminum oxide and having its composition of AlXZr(1-X)OY(0.05≦x≦0.3), hereby being capable of preventing, in a process of forming a capacitor of MIM (Metal Insulator Metal) structure, dielectric breakdown of a capacitor insulating film while a relative dielectric constant of a metal oxide film used as the capacitor insulating film is kept high.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.