Low-impedance decoupling device
US6903438B2 · kind B2 · utility
2Cited by
2References
31Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Apr 8, 2003 |
| Grant date | Jun 7, 2005 |
| Priority date | — |
| Expiry date | Apr 8, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/3011
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A decoupling device for decoupling a high-frequency noise wave in a digital circuit is formed as a line device including a portion of a semiconductor substrate, an insulator film formed thereon as a gate oxide film, and an interconnect line formed thereon as a gate electrode. The line capacitance between the interconnect line and the semiconductor substrate is 100 pF or above, whereby the decoupling device effectively decouples the electromagnetic noise wave generated by a switching device in a frequency range between 10 and 1000 GHz.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.