Biasing system and method for low voltage DC—DC converters with built-in N-FETs
US6903535B2 · kind B2 · utility
22Cited by
6References
13Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Apr 16, 2003 |
| Grant date | Jun 7, 2005 |
| Priority date | — |
| Expiry date | Apr 16, 2023 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02B70/10
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A gate drive supply circuit generating a high-level supply voltage and a low-level supply voltage for driving N-type high-side and low-side power MOSFETs in a multiple-output, low-voltage DC-DC converter integrated circuit. The gate drive supply circuit includes a boost regulator for generating the low-level supply voltage and a charge pump doubler for generating the high-level supply voltage. Both the high-level supply voltage and the low-level supply voltage are distributed to one or more regulators, including but not limited to buck or boost type regulators.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.