Reference voltage generator for biasing a MOSFET with a constant ratio of transconductance and drain current
US6903601B1 · kind B1 · utility
8Cited by
7References
20Claims
0Family size
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Key dates
| Filing date | Aug 14, 2003 |
| Grant date | Jun 7, 2005 |
| Priority date | — |
| Expiry date | Dec 29, 2023 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG05F3/262
- WIPO fieldControl
- WIPO sectorInstruments
Abstract
An integrated circuit (IC) with metal oxide semiconductor field effect transistor (MOSFET) circular for generating a reference signal having a value which remains substantially constant over variations in one or more of the processing (P) of, power supply voltage (V) for and operating temperature (T) of the IC, with such reference signal being suitable for use in generating one or more biasing signals for one or more MOSFETs such that each MOSFET so biased will have a substantially constant ratio of transconductance and drain current.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.