Memory cell with fuse element
US6903993B2 · kind B2 · utility
4Cited by
1References
28Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 22, 2004 |
| Grant date | Jun 7, 2005 |
| Priority date | — |
| Expiry date | Jan 22, 2024 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C17/16
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
The present invention relates to a programmable memory device and a method of setting a state for a programmable memory device. In at least one embodiment, the memory device comprises at least a level shifter adapted to stand off a high programing voltage to at least one fuse element in the memory device, wherein the high programming voltage is used to set a state of the memory device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.