Vertical type semiconductor device producing apparatus
US6905549B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 11, 2003 |
| Grant date | Jun 14, 2005 |
| Priority date | — |
| Expiry date | Apr 11, 2023 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C16/345
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A vertical type semiconductor device producing apparatus comprises a vertical type reaction chamber which is to accommodate a plurality of stacked substrates; an exhaust path which exhausts the reaction chamber, a vacuum exhaust device which exhausts the reaction chamber through the exhaust path; an exhaust valve which opens and closes the exhaust path; a first supply path which supplies a first kind of gas, which contributes to film formation, to the reaction chamber; a second supply path which supplies a second kind of gas, which contributes to the film formation, to the reaction chamber; a first and a second gas supply valves which respectively open and close the first and second supply paths; and a controller which controls the exhaust valve and the first and second gas supply valves such that when the first kind of gas is supplied to the reaction chamber, the first kind of gas is supplied to the reaction chamber from the first supply path in a state in which exhaust of the reaction chamber is being stopped to expose the plurality of substrates in the reaction chamber to the first kind of gas, and when the second kind of gas is supplied to the reaction chamber, the second kind …
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.