Method of forming a low inductance high capacitance capacitor
US6905925B2 · kind B2 · utility
6Cited by
27References
7Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Jul 3, 2003 |
| Grant date | Jun 14, 2005 |
| Priority date | — |
| Expiry date | Sep 4, 2023 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T29/49904
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A capacitor with low inductance connection terminals and having a first surface, includes a first electrode of porous metal, a dielectric layer formed on the porous metal, a second electrode formed on the dielectric layer, and a plurality of connection terminals electrically coupled to the first electrode on the first surface and a plurality of connection terminals electrically coupled to the second electrode on the first surface.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.