Fabrication of B-doped silicon film by LPCVD method using BCI3 and SiH4 gases
US6905963B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 27, 2002 |
| Grant date | Jun 14, 2005 |
| Priority date | — |
| Expiry date | Sep 27, 2022 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/935
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A semiconductor device fabricating method for forming a boron doped silicon film includes the step of forming the boron doped silicon film on a substrate at an inner temperature of the reaction furnace ranging from about 460 to 600° C. or at an average velocity of reaction gases in the reaction furnace being not great than about 2200 cm/min. Further, a substrate processing apparatus for forming a boron doped silicon film on a substrate includes a gas supply line for supplying BCl3 to the reaction furnace. The gas supply line is installed in a portion of the reaction furnace opposite to a heater, and has an outlet for discharging BCl3. The outlet of the gas supply line is provided at an upstream side of gas flow in the reaction furnace.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.