Method of improving electroluminescent efficiency of a MOS device by etching a silicon substrate thereof
US6905977B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 26, 2003 |
| Grant date | Jun 14, 2005 |
| Priority date | — |
| Expiry date | Jul 23, 2023 |
Classification
- Technology area (CPC B)Performing Operations; Transporting
- CPC primaryB82Y20/00
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
The present invention discloses a method of improving an electroluminescent efficiency of a MOS device by etching a semiconductor substrate thereof. A chemical etching process is performed to remove surface states or surface defects located on the surface of a silicon substrate before a nanoparticle layer and a conducting layer is formed on the silicon substrate, in order that the non-radiative electron-hole recombination centers located on the surface of silicon substrate is suppressed. Accordingly, the percentage of radiative electron-hole recombination is heightened and the electroluminescent efficiency of a MOS light emitting device is drastically enhanced. Advantageously, the chemical etching step is able to create a nanostructure on the surface of the silicon substrate to increase the probability of the collision of electron-hole pairs and phonons, and the electroluminescent efficiency of a MOS light emitting device is improved as well.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.