Nonequilibrium photodetector with superlattice exclusion layer
US6906358B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 30, 2003 |
| Grant date | Jun 14, 2005 |
| Priority date | — |
| Expiry date | Jul 21, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F77/146
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
A photosensitive diode has an active region defining a majority carrier of a first conductivity type and a minority carrier of a second conductivity type. At least one extraction region is disposed on a first side of the active region and has a majority carrier of the second conductivity type. Carriers of the second conductivity type are extracted from the active region and into the extraction region under a condition of reverse bias. At least one exclusion region is disposed on a second side of the active region and has a majority carrier of the first conductivity type. The exclusion region prevents entry of its minority carriers, which are of the second conductivity type, into the active region while in a condition of reverse bias. The exclusion region includes a superlattice with a plurality of layers.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.