Semiconductor device and method of fabricating the same
US6906367B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 7, 2003 |
| Grant date | Jun 14, 2005 |
| Priority date | — |
| Expiry date | Aug 7, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D1/684
Abstract
After a MOS transistor is formed on a semiconductor substrate, an Ir film, LT film, PZT film, and IrO2 film are formed in this order on the entire surface. Although the LT film itself is not a ferroelectric film, a ferroelectric film is formed by a stacked film of the LT film and PZT film. In a ferroelectric capacitor having this ferroelectric film, the LT film does not contain Pb, so the alignment can be readily controlled during the film formation. This raises the alignment of the LT film. The crystal structure of the LT film is a perovskite structure similar to that of the PZT film. Since the PZT film is formed on this LT film, the alignment of the LT film is taken over when the PZT film is grown. This raises the alignment of the PZT film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.