Semiconductor device having silicon oxide film
US6906391B2 · kind B2 · utility
1Cited by
4References
18Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Jun 4, 2003 |
| Grant date | Jun 14, 2005 |
| Priority date | — |
| Expiry date | Jun 4, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/691
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device whose working life can be improved is obtained. This semiconductor device comprises a first conductive layer, a second conductive layer and a silicon oxide film, formed between the first and second conductive layers, containing chlorine introduced therein. Thus, the silicon oxide film is inhibited from formation of electron traps while a large number of holes are formed in an initial stage of electron injection into the silicon oxide film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.