Patent · US Expired

Piezoelectric resonator, piezoelectric filter, duplexer, communication apparatus, and method for manufacturing piezoelectric resonator

US6906451B2 · kind B2 · utility

75Cited by
4References
36Claims
0Family size

Assignee

Inventors

Key dates

Filing dateDec 27, 2002
Grant dateJun 14, 2005
Priority date
Expiry dateFeb 5, 2023

Classification

  • Technology area (CPC Y)Emerging Cross-Sectional Technologies
  • CPC primaryY10T29/49156
  • WIPO fieldBasic communication processes
  • WIPO sectorElectrical engineering

Abstract

A piezoelectric thin film resonator having a stabilized temperature characteristic of resonant frequency, a method for manufacturing the same, and a communication apparatus using the piezoelectric thin film resonator are provided. The piezoelectric thin film resonator is provided with a substrate having an opening, first and second insulation films which are provided on one surface of the substrate while covering the opening and which primarily include SiO2 and Al2O3, respectively, Al2O3 having oxygen defect and being in an amorphous state, and a piezoelectric thin film which is provided on the second insulation film and is sandwiched between electrodes and which primarily includes ZnO.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.