Polymide-to-substrate adhesion promotion in HDI
US6908561B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 18, 2002 |
| Grant date | Jun 21, 2005 |
| Priority date | — |
| Expiry date | Aug 5, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/3025
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Methods for adhering polyimide dielectric materials to copper-, titanium-, aluminum-, or copper-and-titanium-containing portions of a substrate are described. The methods include the steps of applying adhesion promoter to a clean surface of the substrate, and curing the adhesion promoter. SPIE varnish is applied over the cured adhesion promoter, and is itself cured. A further layer of adhesion promoter is applied over the cured SPIE varnish, and is cured. The polyimide dielectric material is then laminated to the adhesion promoter. Cleaning of the copper-containing substrate portions is performed by etching with etchant including cupric chloride, cleaning of the titanium-containing substrate portions is performed with etchant including HF, and cleaning of copper- and titanium-containing portions is performed by HF etching followed by cupric chloride etching. Aluminum-containing portions of the substrate are not etched.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.