Method of manufacturing semiconductor device
US6908801B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Dec 18, 2003 |
| Grant date | Jun 21, 2005 |
| Priority date | — |
| Expiry date | Dec 18, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/691
Abstract
A method of manufacturing a semiconductor device comprises forming a gate insulating film on a semiconductor substrate having first and second element regions, forming a mask on the entire surface of the gate insulating film, selectively etching the mask to form an opening for exposing a portion of the gate insulating film, forming a first conductive material film on the entire surface of the mask, patterning the first conductive material film to form a patterned first conductive material film, which is positioned in the first element region, etching away the exposed mask, forming a second conductive material having a work function different from that of the first conductive material film on the gate insulating film, and forming a first gate electrode having the first conductive material film and a second gate electrode made of the second conductive material film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.