Photoresist remover composition
US6908892B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 7, 2001 |
| Grant date | Jun 21, 2005 |
| Priority date | — |
| Expiry date | Jun 3, 2022 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F7/425
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
The present invention is a photoresist remover composition used in order to remove photoresist during the manufacturing process of semiconductor devices, such as large-scale integrated circuits and very large-scale integrated circuits. The present invention comprises 2˜20 weight % of water-soluble hydroxylamine, 5˜15 weight % of oxime compound containing 2 or 3 hydroxyl groups, and 30˜55 weight % of alkyl amide. The photoresist remover composition according to the present invention can easily and quickly remove a photoresist layer that is cured by the processes of hard-bake, dry-etching, and ashing and a side-wall photoresist polymer that is produced from the lower metal film by the reaction of the photoresist with etching and ashing gases during these processes. Especially, the photoresist remover composition has a good property of removing the side-wall photoresist polymer produced from the layers of aluminum, aluminum alloy, and titanium nitride. In addition, during removing process of photoresist, the photoresist remover composition can minimize the corrosion of lower metal film, in particular, the new metallic layers which is adopted to a production line of 64 MDRAM or more-VL…
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.