Flash memory with protruded floating gate
US6909140B2 · kind B2 · utility
1Cited by
3References
4Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Jul 12, 2004 |
| Grant date | Jun 21, 2005 |
| Priority date | — |
| Expiry date | Jul 12, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/035
Abstract
A method of forming a flash memory with a protruded floating gate. A substrate is provided. An isolation area and a plurality of patterned conductive layers are sequentially formed on the substrate. The isolation area protrudes from the upper surface of the substrate to isolate the patterned conductive layers. A photo resist layer is formed on the patterned conductive layer. The present invention also provides a flash memory with a protruded floating gate comprised a substrate, a plurality of protruded floating gates, an insulator, and a control gate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.