High-frequency oscillator for an integrated semiconductor circuit and the use thereof

US6909163B2 · kind B2 · utility

Assignee

• Robert Bosch GmbH · DE

Inventors

• Heinz Pfizenmaier · Leonberg, DE
• Juergen Hasch · Stuttgart, DE

Key dates

• Filing date: Aug 9, 2002
• Grant date: Jun 21, 2005
• Expiry date: Sep 1, 2022

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D86/201
• WIPO field: Telecommunications
• WIPO sector: Electrical engineering

Abstract

A high frequency oscillator for an integrated semiconductor circuit is a component of the semiconductor circuit, which is comprised of a first silicon layer, an adjoining silicon dioxide layer (insulation layer), and an additional subsequent silicon layer (structured layer), (SOI wafer), wherein the high frequency oscillator is comprised of a resonator with a metallized cylinder made of silicon disposed in the structured layer and a coupling disk that overlaps the cylinder in the vicinity of the layer, and an IMPATT diode that is connected to the cylinder of the resonator via a recess in the coupling disk.