Composite material including copper and cuprous oxide and application thereof
US6909185B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 7, 1998 |
| Grant date | Jun 21, 2005 |
| Priority date | — |
| Expiry date | Dec 7, 2018 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/3511
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A composite material is provided, which has a low thermal expansivity, a high thermal conductivity, and a good plastic workability, which composite material may be applied to semiconductor devices and many other uses. The composite material is composed of metal and inorganic particles having a smaller coefficient of thermal expansion than the metal. It is characterized in that the inorganic particles are dispersed in such a way that 95% or more of them (in terms of their area in cross-section) form aggregates of complex configuration joined together. The composite material contains 20-80 vol % of copper oxide, with the remainder being copper. It has a coefficient of thermal expansion of 5×10−6 to 14×10−6/° C. and thermal conductivity of 30-325 W/m·K in the range of room temperature to 300° C. It is suitable for the radiator plate of semiconductor devices and the dielectric plate of electrostatic attractors.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.