Light-emitting device
US6909240B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 17, 2003 |
| Grant date | Jun 21, 2005 |
| Priority date | — |
| Expiry date | Mar 20, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10K59/35
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
A light-emitting device which realizes a high aperture ratio and in which the quality of image is little affected by the variation in the characteristics of TFTs. A large holding capacitor Cs is not provided in the pixel portion but, instead, the channel length and the channel width of the driving TFTs are increased, and the channel capacitance is utilized as Cs. The channel length is selected to be very larger than the channel width to improve current characteristics in the saturated region, and a high VGS is applied to the driving TFTs to obtain a desired drain current. Therefore, the drain currents of the driving TFTs are little affected by the variation in the threshold voltage. In laying out the pixels, further, wiring is arranged under the partitioning wall and the driving TFTs are arranged under the wiring in order to avoid a decrease in the aperture ratio despite of an increase in the size of the driving TFT. In the case of the 3-transistor pixels, the switching TFT and the erasing TFT are linearly arranged to further increase the aperture ratio.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.