Sensors based on giant planar hall effect in dilute magnetic semiconductors
US6910382B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 23, 2003 |
| Grant date | Jun 28, 2005 |
| Priority date | — |
| Expiry date | Jun 23, 2023 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01L9/16
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
Ferromagnetic semiconductor-based sensor devices, including sensors for detecting pressure changes and sensors for detecting magnetic fields, such as switching events in a magnetic recording medium. The pressure sensors of the present invention detect pressure changes using magnetoresistive measurement techniques, and in particular GPHE techniques. Magnetic field detection sensors such as magnetic switching detection sensors include ferromagnetic semiconductor-based materials that provide enhanced sensitivity relative to known materials and techniques. Such magnetic switching detection sensors according to the present invention are particularly useful as a read head sensor for HDD and other magnetic storage technologies.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.