Semiconductor device and method of manufacturing same

US6911352B2 · kind B2 · utility

Assignee

• Canon Kabushiki Kaisha · JP

Inventors

• Takeshi Takada · Numazu, JP
• Naoto Okada · Kitaibaraki, JP

Key dates

• Filing date: Jul 25, 2003
• Grant date: Jun 28, 2005
• Expiry date: Oct 9, 2023

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y02E10/50

Abstract

A semiconductor device which is capable of suppressing short-circuit currents caused to flow through defective areas in a first semiconductor layer can be manufactured at high yield, by utilizing a method of manufacturing a semiconductor device including the steps of forming a first semiconductor layer on a substrate, forming a first transparent electroconductive layer on the first semiconductor layer, and forming a second semiconductor layer on the first transparent electroconductive layer, the method further including executing passivation treatment on defects in the first semiconductor layer before the formation of the second semiconductor layer.