Method of forming a contact in a semiconductor device utilizing a plasma treatment
US6911382B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 25, 2003 |
| Grant date | Jun 28, 2005 |
| Priority date | — |
| Expiry date | Nov 25, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76831
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Semiconductor devices and methods to form a contact of a semiconductor device are disclosed. An example method to form a contact includes forming an insulating layer on a substrate; etching the insulating layer to form a contact hole; depositing a silicon layer on sidewalls and an undersurface of the contact hole; forming a silicon spacer on the sidewalls of the contact hole by etching the silicon layer; transforming the silicon spacer to a silicon nitride spacer; depositing a diffusion barrier on the silicon nitride spacer; and filling the contact hole with tungsten. Because the silicon nitride spacer formed on the sidewalls of the contact hole can serve as a leakage current blocking layer, the yield and the reliability of the semiconductor devices manufactured by this example process are enhanced.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.