Bipolar transistors with vertical structures

US6911716B2 · kind B2 · utility

Assignee

• LUCENT TECHNOLOGIES INC. · US

Inventors

• Young-Kai Chen · Berkeley Heights, US
• Lay-Lay Chua · Singapore, SG
• Vincent Houtsma · New Providence, US
• Rose Kopf · Bound Brook, US
• Andreas Leven · Gillette, US
• Chun-Ting Liu · Hsinchu, TW
• Wei-Jer Sung · Hsinchu, TW
• Yang Yang · Parsippany, US

Key dates

• Filing date: Sep 13, 2002
• Grant date: Jun 28, 2005
• Expiry date: Jan 2, 2023

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D62/85

Abstract

A method for fabricating a bipolar transistor includes forming a vertical sequence of semiconductor layers, forming an implant mask on the last formed semiconductor layer, and implanting dopant ions into a portion of one or more of the semiconductor layers. The sequence of semiconductor layers includes a collector layer, a base layer that is in contact with the collector layer, and an emitter layer that is in contact with the base layer. The implanting uses a process in which the implant mask stops dopant ions from penetrating into a portion of the sequence of layers.