Method of manufacturing a thin piezo resistive pressure sensor
US6912759B2 · kind B2 · utility
38Cited by
19References
32Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 20, 2001 |
| Grant date | Jul 5, 2005 |
| Priority date | — |
| Expiry date | Aug 23, 2022 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T29/49082
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A method for forming a sensor including the steps of providing a base wafer and forming a sensor cavity in the base wafer. The method further includes the step of coupling a diaphragm wafer to the base wafer, the diaphragm wafer including a diaphragm portion and a sacrificial portion. The diaphragm wafer is coupled to the base wafer such the diaphragm portion generally covers the sensor cavity. The method further includes the steps of reducing the thickness of the diaphragm wafer by removing the sacrificial portion, and forming or locating at least one piezo resistive portion on the diaphragm portion.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.