Structure and manufacturing method for GaN light emitting diodes

US6914264B2 · kind B2 · utility

Assignee

• FORMOSA EPITAXY INCORPORATION · TW

Inventors

• Lung-Chien Chen · Hualien City, TW
• Wen-How Lan · Taoyuan, TW
• Fen-Ren Chien · New Taipei, TW

Key dates

• Filing date: Oct 29, 2002
• Grant date: Jul 5, 2005
• Expiry date: Apr 29, 2023

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10H20/833

Abstract

A GaN semiconductor stack layer is formed on top of a substrate for manufacturing a light emitting diode. The GaN semiconductor stack layer includes, from the bottom up, an N-type GaN contact layer, a light emitting stack layer and a P-type contact layer. The next step is to form a digital transparent layer on the P-type GaN contact layer, then use dry etching technique to etch downward through the digital transparent layer, the P-type GaN contact layer, the light emitting layer, the N-type GaN contact layer, and form an N-metal forming area within the N-type GaN contact layer. The next step is to form a first ohmic contact electrode on the P-type contact layer to serve as P-type ohmic contact, and a second ohmic contact electrode on the N-metal forming area to serve as N-type ohmic contact. Finally, a bump pad is formed on the first ohmic contact electrode and the second ohmic contact electrode, respectively.