Thin-film semiconductor epitaxial substrate having boron containing interface layer between a collector layer and a sub-collector layer

US6914274B2 · kind B2 · utility

Assignee

• SUMITOMO CHEMICAL COMPANY, LIMITED · JP

Inventors

• Yuichi Hiroyama · Kusatsu, JP
• Tomoyuki Takada · Tokyo, JP
• Osamu Ichikawa · Yokohama, JP

Key dates

• Filing date: Mar 24, 2003
• Grant date: Jul 5, 2005
• Expiry date: Mar 24, 2023

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D62/136

Abstract

A thin-film semiconductor epitaxial substrate comprising a substrate and a sub-collector layer, a collector layer, a base layer and an emitter layer(s) which are formed as thin-film semiconductor epitaxial layers on said substrate, wherein boron (B) added is present in at least a part of a layer portion comprising said sub-collector layer and said collector layer.