High activity, spatially distributed radiation source for accurately simulating semiconductor device radiation environments
US6914447B2 · kind B2 · utility
12Cited by
14References
2Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Apr 23, 2003 |
| Grant date | Jul 5, 2005 |
| Priority date | — |
| Expiry date | Dec 25, 2023 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG21K5/02
- WIPO fieldEngines, pumps, turbines
- WIPO sectorMechanical engineering
Abstract
The present invention pertains to radiation sources that mimic radiation environment(s) encountered by packaged semiconductor devices. The sources are suitable for use in test systems operative to test for soft error and/or failure rates in devices sensitive to such radiation. The radiation is highly active to exacerbate soft error rates and thereby accelerate testing and reduce test times. The sources are also relatively uniformly distributed within a medium to simulate the direction(s) and energy spectra of radiation that would actually be encountered by semiconductor devices in device operation.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.