Giant magnetoresistive sensor having selfconsistent demagnetization fields
US6914759B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 26, 2001 |
| Grant date | Jul 5, 2005 |
| Priority date | — |
| Expiry date | May 12, 2022 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11B2005/3996
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
The present invention is directed to a spin valve sensor for use in a data storage system, that is adapted to receive a sense current and produce a GMR effect in response to applied magnetic fields. The spin valve sensor includes first and second ferromagnetic free layers, a spacer layer positioned between the first and second ferromagnetic free layers, and a biasing component. The first ferromagnetic free layer has a magnetization (M1) in a first direction, when in a quiescent (non-biased) state. The second ferromagnetic free layer has a magnetization (M2) in a second direction that is anti-parallel to the first direction, when in a quiescent (non biased) state.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.