Semiconductor laser and manufacturing method thereof
US6914923B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 28, 2003 |
| Grant date | Jul 5, 2005 |
| Priority date | — |
| Expiry date | Sep 1, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/223
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A semiconductor laser includes a substrate, a double hetero structure portion formed on the substrate, the double hetero structure including a first clad layer formed on the substrate, an active layer formed on the first clad layer and a second clad layer formed on the active layer, the second clad layer having a stripe-form projection on an upper surface thereof, the projection having an upper portion whose sidewalls are substantially vertically formed on the surface of the substrate and a step-shaped lower portion whose line width is larger than that of the upper portion, and a current blocking layer formed extending from side surfaces of the projection to the upper surface of the second clad layer except an upper surface of the projection.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.