Method for forming thin film and method for forming electronic device
US6916506B2 · kind B2 · utility
2Cited by
3References
17Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 10, 2002 |
| Grant date | Jul 12, 2005 |
| Priority date | — |
| Expiry date | Jan 23, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10K85/60
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
The invention provides thin films of low molecular compounds. A thin-film forming area on a surface of a silicon substrate is allowed to have high affinity for a thin-film forming material. For this purpose, a self-assembled film having an atomic group in common with a molecule constituting the thin-film forming material is formed in the thin-film forming area. Thereafter, a solution is discharged to the surface of the silicon substrate by an ink jet process.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.