Method for producing a nitride semiconductor element
US6916676B2 · kind B2 · utility
52Cited by
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19Claims
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Key dates
| Filing date | Jul 9, 2003 |
| Grant date | Jul 12, 2005 |
| Priority date | — |
| Expiry date | Aug 23, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/841
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
A method of producing an efficient nitride semiconductor element having an opposed terminal structure. The method includes a growing step for growing the nitride semiconductor further having an undoped GaN layer on a different materials substrate; subsequently, an attaching step for attaching the supporting substrate to the first conductive type nitride semiconductor layer side of the nitride semiconductor and interposing a first terminal between them; and subsequently, an exposing step for exposing the second conductive type nitride semiconductor layer by eliminating the different material substrate and the undoped GaN.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.