Method for growing a monocrystalline oxide layer and for fabricating a semiconductor device on a monocrystalline substrate
US6916717B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 3, 2002 |
| Grant date | Jul 12, 2005 |
| Priority date | — |
| Expiry date | Jun 22, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02521
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
High quality monocrystalline metal oxide layers are grown on a monocrystalline substrate such as a silicon wafer. The monocrystalline metal oxide is grown on the silicon substrate at a temperature low enough to prevent deleterious and simultaneous oxidation of the silicon substrate. After a layer of 1-3 monolayers of the monocrystalline oxide is grown, the growth is stopped and the crystal quality of that layer is improved by a higher temperature anneal. Following the anneal, the thickness of the layer can be increased by restarting the low temperature growth. An amorphous silicon oxide layer can be grown at the interface between the monocrystalline metal oxide layer and the silicon substrate after the thickness of the monocrystalline oxide reaches a few monolayers.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.