Thin film devices and method for fabricating thin film devices
US6916720B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 5, 2002 |
| Grant date | Jul 12, 2005 |
| Priority date | — |
| Expiry date | Oct 10, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/015
Abstract
A method for making a thin film device on integrated circuits including the steps of applying a first photoresist layer to a first surface, and patterning the first photoresist layer to have at least a first opening that exposes the first surface. A film is deposited onto the first photoresist layer, wherein a portion of the deposited film is deposited onto the exposed first surface. A second photoresist layer is applied onto the deposited layer, wherein the second photoresist layer is applied to the portion of the deposited film within the first opening and covers a second portion of the deposited layer, wherein the first photoresist layer and the second photoresist layer assist in the defining of the deposited layer. The deposited layer, first photoresist layer, and second photoresist layer are selectively removed, therein exposing the first surface and the second portion of the deposited layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.