Patent · US Expired

Thin film devices and method for fabricating thin film devices

US6916720B2 · kind B2 · utility

1Cited by
15References
16Claims
0Family size

Assignee

Inventors

Key dates

Filing dateJul 5, 2002
Grant dateJul 12, 2005
Priority date
Expiry dateOct 10, 2022

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH10D30/015

Abstract

A method for making a thin film device on integrated circuits including the steps of applying a first photoresist layer to a first surface, and patterning the first photoresist layer to have at least a first opening that exposes the first surface. A film is deposited onto the first photoresist layer, wherein a portion of the deposited film is deposited onto the exposed first surface. A second photoresist layer is applied onto the deposited layer, wherein the second photoresist layer is applied to the portion of the deposited film within the first opening and covers a second portion of the deposited layer, wherein the first photoresist layer and the second photoresist layer assist in the defining of the deposited layer. The deposited layer, first photoresist layer, and second photoresist layer are selectively removed, therein exposing the first surface and the second portion of the deposited layer.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.