Method for manufacturing semiconductor device, and method for manufacturing semiconductor module
US6916725B2 · kind B2 · utility
71Cited by
4References
8Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Jan 15, 2004 |
| Grant date | Jul 12, 2005 |
| Priority date | — |
| Expiry date | Jan 15, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/00014
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
To form through electrodes effectively without deteriorating the quality of the through electrodes, a semiconductor substrate is spin etched at its back surface, thereby thinning down the semiconductor substrate, making opening sections penetrate the semiconductor substrate, and forming through holes in the semiconductor substrate. Tips of embedded electrodes are exposed out of the through holes in the semiconductor substrate, to form through electrodes.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.