AlGaAs or InGaP low turn-on voltage GaAs-based heterojunction bipolar transistor
US6917061B2 · kind B2 · utility
78Cited by
20References
4Claims
0Family size
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Key dates
| Filing date | Jul 22, 2002 |
| Grant date | Jul 12, 2005 |
| Priority date | — |
| Expiry date | Jun 18, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/852
Abstract
A heterojunction bipolar transistor is provided that has a reduced turn-on voltage threshold. A base spacer layer is provided and alternately an emitter layer is provided that has a lowered energy gap. The lowered energy gap of the base spacer or the emitter spacer allow the heterojunction bipolar transistor to realize a lower turn-on voltage threshold. The thickness of the emitter layer if utilized is kept to a minimum to reduce the associated space charge recombination current in the heterojunction bipolar transistor.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.