Materials and methods for low pressure chemical-mechanical planarization
US6918821B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 12, 2003 |
| Grant date | Jul 19, 2005 |
| Priority date | — |
| Expiry date | Nov 12, 2023 |
Classification
- Technology area (CPC B)Performing Operations; Transporting
- CPC primaryB24B49/16
- WIPO fieldMachine tools
- WIPO sectorMechanical engineering
Abstract
Provided are materials and methods for the chemical mechanical planarization of material layers using a down force of less than about 2.5 psi while maintaining a material removal rate generally similar to that obtained using higher down forces while simultaneously improving the selectivity of the process with respect to a primary material formed over a barrier material. The materials and methods disclosed herein are suitable for use in meatallization operations during semiconductor device fabrication, in particular in processes in which the primary material is a softer metal such as copper and the barrier material is a harder material such as a metal nitride.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.