Aluminum nitride ceramics, members for use in a system for producing semiconductors, and corrosion resistant members
US6919286B2 · kind B2 · utility
5Cited by
7References
19Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 26, 2002 |
| Grant date | Jul 19, 2005 |
| Priority date | — |
| Expiry date | Mar 6, 2023 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC04B2235/9607
- WIPO fieldMaterials, metallurgy
- WIPO sectorChemistry
Abstract
An aluminum nitride ceramic is provided, including 0.5 to 10 weight percent of boron atoms and 0.1 to 2.5 weight percent of carbon atoms. The ceramic has a room temperature volume resistivity not lower than 1×1014Ω·cm, and a volume resistivity at 500° C. of not lower than 1×108Ω·cm. An a-axis lattice constant of the aluminum nitride in the ceramic is not shorter than 3.112 angstrom and a c-axis lattice constant of the aluminum nitride is not shorter than 4.980 angstrom.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.