Light-emitting diode with silicon carbide substrate
US6919585B2 · kind B2 · utility
17Cited by
10References
41Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | May 17, 2002 |
| Grant date | Jul 19, 2005 |
| Priority date | — |
| Expiry date | May 17, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/01335
Abstract
A light-emitting diode is based on an undoped intrinsic SiC substrate on which are grown: an insulating buffer or nucleation structure; a light-emitting structure; window layers; a semi-transparent conductive layer; a bond pad adhesion layer; a p-type electrode bond pad; and an n-type electrode bond pad. In one embodiment, the light-emitting surface of the substrate is roughened to maximize light emission.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.