Patent · US Expired

Hydrogen diffusion hybrid port and method of forming

US6919623B2 · kind B2 · utility

0Cited by
7References
31Claims
0Family size

Assignee

Inventors

Key dates

Filing dateDec 12, 2003
Grant dateJul 19, 2005
Priority date
Expiry dateDec 12, 2023

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01L2924/16152
  • WIPO fieldSemiconductors
  • WIPO sectorElectrical engineering

Abstract

A hydrogen diffusion port for use in a packaged electronic device. In one embodiment, the hydrogen window is characterized by a substantial absence of plating from the external surfaces of the cover the base. The hydrogen diffusion port is selected from the group of materials consisting of palladium and its alloys, platinum and its alloys and titanium and its alloys The cover is welded to the base, and the hydrogen diffusion port is affixed to an aperture in the cover. The port is affixed by a low temperature process that can be accomplished after the cover is attached to the base to form a housing and the housing is degassed, without compromising the electronics within the housing and that does not require a partial pressure of hydrogen (which may be reintroduced into the materials) to accomplish, such as by soldering the diffusion port into the cover aperture, or by swaging the diffusion port into the cover aperture.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.