Piezoelectric/electrostrictive film device
US6919667B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 11, 2002 |
| Grant date | Jul 19, 2005 |
| Priority date | — |
| Expiry date | Dec 13, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N30/8548
Abstract
A piezoelectric/electrostrictive film device is provided, including a piezoelectric/electrostrictive layer and at least a pair of electrodes formed on the piezoelectric/electrostrictive layer. A perovskite piezoelectric/electrostrictive material of the piezoelectric/electrostrictive layer contains Pb, and the perovskite piezoelectric/electrostrictive material contains MnO2 in an amount of 0.1 to 0.5% by weight. Specifically, the perovskite piezoelectric/electrostrictive material contains Pb(Mg1/3Nb2/3)O3—PbZrO3—PbTiO3 in which a part of Pb is substituted with Sr.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.