Thin film deposition method of nitride semiconductor and nitride semiconductor light emitting device
US6920166B2 · kind B2 · utility
247Cited by
5References
20Claims
0Family size
Assignee
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Key dates
| Filing date | Mar 17, 2003 |
| Grant date | Jul 19, 2005 |
| Priority date | — |
| Expiry date | Sep 5, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/817
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A masking material 13, which includes stripe-like openings 12 parallel to the [1-100] direction of a nitride semiconductor thin film, is formed on a substrate. Nitride semiconductor thin films 11 doped with Mg are grown on the openings 12 by selective-area growth. The nitride semiconductor thin films 11 are composed of a portion 14 formed as a result of the growth in the direction perpendicular to a (0001) principal plane, and a portion 15 formed as a result of the growth of {11-2x} facets (x=0, 1, 2). The Mg concentration of the portion 15 is made lower than that of the portion 14.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.