Method of making vacuum microelectronic device
US6920680B2 · kind B2 · utility
5Cited by
11References
7Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 28, 2001 |
| Grant date | Jul 26, 2005 |
| Priority date | — |
| Expiry date | Oct 22, 2021 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T29/49126
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A method of forming a vacuum microelectronic device including steps of forming at least one electron emitter on a substrate, applying a first electric field to move a portion of the at least one electron emitter in a direction toward the first electric field, and maintaining the at least one electron emitter in the direction after removing the first electric field.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.