Electronic device and methods for fabricating an electronic device

US6921679B2 · kind B2 · utility

Assignee

• Palo Alto Research Center Incorporated · US

Inventors

• Michael L. Chabinyc · Mountain View, US
• Alberto Salleo · San Francisco, US
• William S. Wong · Redwood City, US

Key dates

• Filing date: Dec 19, 2003
• Grant date: Jul 26, 2005
• Expiry date: Dec 31, 2023

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10K10/491

Abstract

An electronic device and a method of fabricating the electronic device includes forming a first electrical contact, a dielectric layer and a second electrical contact wherein the dielectric layer is located between the first and the second electrical contacts, forming an electrically insulating layer over the dielectric layer and the first electrical contact, exposing the first and second electrical contact, the dielectric layer and a first portion of the electrically insulating layer to radiation from the side of the first electrical contact, removing a second portion of the electrically insulating layer that was not irradiated by the radiation, providing a semiconductor material over a portion of the dielectric layer, and forming at least a third electrical contact over at least a portion of the electrically insulating layer and the semiconductor material.