Growing smooth semiconductor layers
US6921726B2 · kind B2 · utility
1Cited by
2References
14Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 13, 2002 |
| Grant date | Jul 26, 2005 |
| Priority date | — |
| Expiry date | Mar 13, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02631
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method includes epitaxially growing a semiconductor layer with a free surface and performing an anneal that reduces atomic roughness on the free surface. The free surface has an orientation with respect to lattice axes of the layer for which atoms in flat regions of the free surface have more chemical bonds to the layer than do, at least, some of the atoms at edges of monolayer steps on the free surface.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.