Semiconductor light-emitting device
US6921924B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 18, 2003 |
| Grant date | Jul 26, 2005 |
| Priority date | — |
| Expiry date | Jun 18, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/82
Abstract
A method for manufacturing a semiconductor light-emitting device. The semiconductor light-emitting device has a substrate, and a semiconductor layer, a n-type semiconductor layer, and a p-type semiconductor layer successively formed atop the substrate. The method forms an intermediate layer having a predetermined pattern between the substrate and the semiconductor layer, or between the semiconductor layer and the n-type semiconductor layer, or between the n-type semiconductor layer and the p-type semiconductor layer. The p-type semiconductor layer has an uneven top layer due to the intermediate layer having a predetermined pattern and the total internal reflection of the LED can be reduced. The intermediate layer is a conductive material to reduce serial resistance of the LED.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.