Nitride semiconductor element
US6921928B2 · kind B2 · utility
27Cited by
6References
10Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Oct 2, 2003 |
| Grant date | Jul 26, 2005 |
| Priority date | — |
| Expiry date | Oct 2, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/831
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
In the nitride semiconductor device having a p-type nitride semiconductor layer, an electrode including at least rhodium and iridium is formed on the p-type nitride semiconductor layer. By this construction, an excellent ohmic contact between the electrode and the p-type nitride semiconductor layer and a high reflectivity in the electrode can be obtained, so that the nitride semiconductor device having excellent external quantum efficiency can be provided.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.